Research

Production and characterisation of thin films:
  • Metal-oxides: SiO2, Ta2O5, Nb2O5, HfO2
  • Metal-nitrides and -oxy-nitrides: TiN, SixOyNz, AlxOyNz
The following deposition processes are available for production with our plant BAP 800:
  • Ion plating (RLVIP - Reactive Low Voltage Ion Plating)
  • Ion Beam Assisted Deposition (IBAD) with a Kaufman-type ion source (Mark II)
  • Reactive and non-reactive conventional evaporation
Characterisation and modelling of plasma and ion assisted deposition processes

Three instruments are available to measure the process characteristics:

  • Plasma monitor PPM 421 (Inficon): mass spectrometry and energy analysis
  • Langmuir probe system (Scientific Systems): determination of plasma parameters (e.g. floating potential, plasma potential, electron and ion density)
  • Faraday cup system MIEDA - Multichannel Ion Energy Distribution Analyser (TFT)
Characterisation of thin films

Optical properties:

  • Complex refractive index: N = n - ik (real refractive index n, extinction coefficient k)
  • Optical losses V = A + S (absorption + scattering)
  • Spectral stability of the optical properties (transmission, reflection, absorption) measured with spectrophotometer Perkin Elmer Lambda 19
  • Optical absorption: to measure very low absorption values we use transversal Photothermal Deflection Spectroscopy (PDS)
  • additional method for the measurement of optical absorption and refractive index: Guided Wave Technique (GWT)

Mechanical properties:

  • Mechanical stress (Laser interferometric technique)
  • Hardness H of the films (Knoop indention)
  • Abrasion resistance (rubber test)

Environmental stability:

  • Measurement of water sorption by spectrophotometer
  • Measurement of water diffusion (important for medical implants)